ALE Systems
As next-generation compound semiconductor devices such as GaN HEMTs, SiC power transistors, and high-density 2D electronics continue to scale down, conventional continuous Inductively Coupled Plasma (ICP) etching encounters critical physical limitations. Standard plasma processes often introduce crystal lattice degradation, surface roughness, and uncontrolled over-etching due to high-energy ion bombardment and continuous chemical exposure. Samco’s Atomic Layer Etching (ALE) technology overcomes these physical constraints by decoupling the etching process into sequential, self-limiting reaction steps. By strictly separating chemical surface modification from reaction product desorption, our systems deliver sub-nanometer depth precision, preserve underlying crystal integrity, and ensure complete immunity to micro-loading across varying pattern densities, bridging the gap from advanced laboratory research to high-volume manufacturing.
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ALE System RIE-400iP-ALE
Atomic-Scale Etch Precision
ICP Etching Systems
Samco’s Inductively Coupled Plasma (ICP) etching systems combine independent high-density plasma generation and directional ion acceleration to deliver fine-pattern micro-fabrication for compound semiconductors, silicon substrates, and advanced electronic devices. By decoupling plasma density from substrate bias, our ICP platforms achieve high etching rates, smooth sidewall morphology, and excellent profile control over high-aspect-ratio structures. Built to bridge the gap between Lab and Fab, Samco ICP etching systems enable predictable process scaling from initial device research to automated volume production.
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ICP Etching System RIE-400iP
Compact III-V Etching System
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ICP Etching System RIE-400iPC
Cassette Loading System for 4"
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ICP Etching System RIE-800iP
Flagship Load Lock System
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ICP Etching System RIE-800iPC
Flagship Cassette Loading System
Si DRIE Systems
Samco’s Silicon Deep Reactive Ion Etching (Si DRIE) systems utilize high-density plasma technologies to achieve fast, high-aspect-ratio micro-fabrication in silicon substrates. Equipped with high-precision gas switching networks, 5 kW high-power RF sources, and temperature-controlled electrostatic chucks (ESC), our equipment enables fast, alternating etch-passivation cycling using the Bosch Process. Built to deliver exceptional process stability, Samco Si DRIE platforms provide repeatable silicon processing for MEMS, TSV, and advanced packaging applications.
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Si DRIE System RIE-400iPB
Si DRIE & SiO₂ Etch
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Si DRIE System RIE-800iPB
Load Lock System for 8"
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Si DRIE System RIE-800iPBC
Cassette Loading System
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Si DRIE System RIE-800BCT
Dual Cassettes Loading
CCP-RIE Systems
Samco’s Capacitively Coupled Plasma Reactive Ion Etching (CCP-RIE) systems provide stable dry etching solutions for dielectric thin films, fluorinated polymers, and surface modification processes. Utilizing parallel-plate electrode configurations, our CCP platforms generate uniform, low-density plasma across large substrate areas. Designed to meet versatile R&D and production requirements, Samco CCP-RIE systems offer broad operational windows for academic laboratories and semiconductor manufacturing facilities alike.
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CCP-RIE System RIE-10NR
De Facto Industry Standard
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CCP-RIE System RIE-200NL
Load Lock CCP-RIE System
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CCP-RIE System RIE-200C
2 Cassettes CCP-RIE System
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CCP-RIE System RIE-300NR
ø300 mm CCP-RIE System
