ALD Systems​

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Samco’s atomic layer deposition (ALD) systems deliver highly uniform, pinhole-free dielectric and functional thin films for compound semiconductors, silicon substrates, and advanced electronic devices. Driven by sequential, self-limiting surface reactions, our thermal and plasma-enhanced ALD technologies provide precise atomic-scale thickness control and exceptional step coverage over extreme aspect ratio structures. Built to bridge the gap between Lab and Fab, Samco ALD platforms enable reproducible process scaling from fundamental university research to automated volume production.

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PECVD Systems

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Samco’s plasma enhanced chemical vapor deposition (PECVD) systems utilize radio frequency (RF) generated plasma to form high-density dielectric and passivation films at reduced substrate temperatures. Designed to optimize film stoichiometry and physical stress, our PECVD equipment enables uniform deposition of silicon oxide (SiO2), silicon nitride (SiN), and silicon oxynitride (SiON). Built to bridge the gap between Lab and Fab, Samco PECVD platforms deliver stable, repeatable film growth across compound semiconductors, silicon devices, and advanced electronic devices.

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LSCVD Systems

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Engineered for low-temperature deposition, Samco’s Liquid Source Chemical Vapor Deposition (LSCVD) system processes silicon dioxide (SiO2) and silicon nitride (SiN) films using liquid precursors like TEOS and SN-2. By vaporizing liquid precursors, the system deposits high-quality dielectric and passivation layers without high thermal processing—protecting heat-sensitive substrates (such as compound semiconductors, flexible polymers, and microelectronics) from thermal stress and degradation.Equipped with a specialized liquid delivery system, the LSCVD ensures uniform film thickness, exceptional step coverage, and reliable process repeatability. With its compact footprint, it delivers a versatile, dependable solution for advanced R&D and specialized production across "Lab and Fab."

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