- What's New
- News
- Disclosure
- Tech News
- Video
-
6 September 2024
News
Samco Interview: Dr. Johann Osmond, NanoCharacterization Lab Head, NanoFabrication Lab Scientific Officer at the Institute of Photonic Sciences (ICFO)
-
5 August 2024
News
Samco Inc. donates to Ukraine Humanitarian Crisis Relief Fund
-
26 July 2024
Tech News
Technical Report: Innovation with the New Plasma Source HSTC-M™
-
19 July 2024
News
Samco Announces Sale of Advanced Etching Systems to III-V Lab in Europe
-
2 July 2024
News
Dr. Carlos Paz de Araujo Visits Samco Inc. to Discuss Revolutionary Quantum Effect Device
-
6 September 2024
News
Samco Interview: Dr. Johann Osmond, NanoCharacterization Lab Head, NanoFabrication Lab Scientific Officer at the Institute of Photonic Sciences (ICFO)
-
5 August 2024
News
Samco Inc. donates to Ukraine Humanitarian Crisis Relief Fund
-
19 July 2024
News
Samco Announces Sale of Advanced Etching Systems to III-V Lab in Europe
-
2 July 2024
News
Dr. Carlos Paz de Araujo Visits Samco Inc. to Discuss Revolutionary Quantum Effect Device
-
24 June 2024
News
FORTUNE Magazine: Kyoto's Semiconductor Success
-
7 June 2024
FY2024
Summary of Non-Consolidated Financial Results for the Nine Months Ended April 30, 2024
-
13 March 2024
FY2024
Summary of Non-Consolidated Financial Results for the Six Months Ended January 31, 2024
-
11 December 2023
FY2024
Summary of Non-Consolidated Financial Results for the Three Months Ended October 31, 2023
-
29 September 2023
FY2023
Notice of the 44rd Annual General Meeting of Shareholders
-
11 September 2023
FY2023
Summary of Non-Consolidated Financial Results for the Year Ended July 31, 2023
-
26 July 2024
2024
Technical Report: Innovation with the New Plasma Source HSTC-M™
-
1 March 2024
2024
Technical Report: New Approach for Trench-Type SiC MOSFET
-
20 February 2024
2024
Technical Report: Introduction of the Three-Chamber CVD System "PD-2203LC"
-
26 January 2024
2024
Technical Report: Introduction of Plasma Scribing Technology on GaAs Wafers Using ICP Etching
-
30 July 2023
2023
Technical Report: Device Isolation Processing of GaN on Si Power Devices