ICP-RIE Plasma Etching System RIE-802iPC
Double chamber system


High-density plasma etching system uses an inductively coupled plasma as the discharge form. This system is equipped with a vacuum cassette chamber and is a full-scale production system with excellent process repeatability and stability.

Key Features and Benefits

New ICP Source "HSTC™: Hyper Symmetrical Tornado Coil

High RF power (2 kW or more) can be applied efficiently and stably, and good uniformity is achieved.

High Flow Exhaust System

The exhaust system directly connected to the reaction chamber enables a wide range of process windows from small flow and low pressure ranges to large flow and high pressure ranges.

Lower Electrode Lifting Mechanism

The distance between the wafer and the plasma is optimized to ensure good in-plane uniformity.

Easy-maintainance design

The TMP (turbomolecular pump) are integrated into the unit for easy replacement.


High-precision processing of compound semiconductors such as GaN, GaAs, InP, etc.

High-speed processing of SiC and SiO₂

Etching of ferroelectrics (PZT, BST, SBT, SBT), electrode materials (Pt, Au, Ru, Al) and other difficult-to-etch materials

Plasma dicing and thinning of compound semiconductor wafers