Liquid Source CVD Systems
The Liquid Source CVD Systems is a low-temperature (80 ~ 400°C), high-rate (>300 nm/min) plasma enhanced CVD system for R&D. Samco's unique LSCVD system uses self-bias deposition techniques and a TEOS to deposit SiO2 films with low stress, from thin films to extremely thick films (up to 100 µm).
Key Features and Benefits
LSCVD features a unique plasma-enhanced CVD technique which utilizes a liquid TEOS source and allows deposition of stress-free SiO2 films at temperatures from 80~300°C. The strong sheath electrical field surrounding the cathode-coupled sample stage generates a high level of ion energy, which enables the deposition of silicon oxide films with low internal stress, from thin films to thick films (up to 100 μm). Furthermore, LSCVD™'s films are incredibly conformal, and the ability to deposit in high aspect holes makes the system uniquely suited to TSV and MEMS applications.
FAQs about Liquid Source CVD Systems
- What is the difference between conventional anode-coupled CVD systems and cathode-coupled CVD systems that utilize self bias voltage?
- The difference is the position of the sample relative to the RF powered electrode. Cathode-coupled CVD systems make maximum use of self-bias voltage by placing the sample on the cathode electrode instead of the anode electrode.