Liquid Source CVD Systems

The Liquid Source CVD Systems is a low-temperature (80 ~ 400°C), high-rate (>300 nm/min) plasma enhanced CVD system for R&D. Samco's unique LSCVD system uses self-bias deposition techniques and a TEOS to deposit SiO2 films with low stress, from thin films to extremely thick films (up to 100 µm).

Key Features and Benefits

LSCVD features a unique plasma-enhanced CVD technique which utilizes a liquid TEOS source and allows deposition of stress-free SiO2 films at temperatures from 80~300°C. The strong sheath electrical field surrounding the cathode-coupled sample stage generates a high level of ion energy, which enables the deposition of silicon oxide films with low internal stress, from thin films to thick films (up to 100 μm). Furthermore, LSCVD™'s films are incredibly conformal, and the ability to deposit in high aspect holes makes the system uniquely suited to TSV and MEMS applications.

FAQs about Liquid Source CVD Systems

What is the difference between conventional anode-coupled CVD systems and cathode-coupled CVD systems that utilize self bias voltage?
The difference is the position of the sample relative to the RF powered electrode. Cathode-coupled CVD systems make maximum use of self-bias voltage by placing the sample on the cathode electrode instead of the anode electrode.