Samco
LSCVD Systems

Engineered for low-temperature deposition, Samco’s Liquid Source Chemical Vapor Deposition (LSCVD) system processes silicon dioxide (SiO2) and silicon nitride (SiN) films using liquid precursors like TEOS and SN-2. By vaporizing liquid precursors, the system deposits high-quality dielectric and passivation layers without high thermal processing—protecting heat-sensitive substrates (such as compound semiconductors, flexible polymers, and microelectronics) from thermal stress and degradation.Equipped with a specialized liquid delivery system, the LSCVD ensures uniform film thickness, exceptional step coverage, and reliable process repeatability. With its compact footprint, it delivers a versatile, dependable solution for advanced R&D and specialized production across "Lab and Fab."

Features of LSCVD Systems

The LSCVD system is a high-throughput, low-temperature plasma-enhanced CVD system designed for mass production. Combining a cathode-coupled self-bias deposition technique with liquid TEOS sources, it achieves exceptional deposition rates exceeding 300 nm/min, forming low-stress SiO2 films ranging from thin layers up to 100 µm thick. Thanks to its low-temperature processing capabilities, the system allows direct deposition onto heat-sensitive polymer and plastic substrates without thermal damage. It also delivers superior step coverage for complex, high aspect ratio geometries, making it ideal for MEMS devices and via sidewall insulation in 3D LSIs. Furthermore, by introducing liquid sources such as Germanium, Phosphorus, or Boron, users can precisely control the refractive index of the film. Equipped with an atmospheric cassette loading mechanism compatible with carrier trays, the LSCVD system offers outstanding process repeatability and productivity for optical waveguides, SAW device passivation, and advanced microfabrication applications.

LSCVD Systems FAQ

What are the primary advantages of Samco's LSCVD system over conventional CVD systems?
The LSCVD system utilizes a cathode-coupled self-bias deposition technique and liquid TEOS sources to achieve high deposition rates (>300 nm/min) at low temperatures (80–400C). This combination allows for low-stress SiO2 film formation from thin layers up to 100 µm thick without causing thermal damage to temperature-sensitive substrates
Can the LSCVD system process heat-sensitive materials like polymers or plastics?
Yes. Because the LSCVD system operates at low temperatures down to 80C, it can safely deposit high-quality protective and insulating dielectric layers directly onto plastic, polymer, and other heat-sensitive substrates without risking deformation or thermal stress.
How well does the system handle high-aspect-ratio geometries like MEMS or TSVs?
The system delivers exceptional step coverage on complex, 3D high-aspect-ratio structures. This makes it ideal for challenging applications such as conformal insulating film deposition on via sidewalls for 3D LSIs and coating intricate MEMS devices.
Is it possible to tune optical properties like the refractive index with this system?
Yes. By introducing additional liquid precursors such as Germanium (Ge), Phosphorus (P), or Boron (B), operators can precisely control and fine-tune the refractive index of the deposited film. This capability is particularly useful for fabricating optical waveguides (fiber cores and cladding).

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