Si Deep Reactive Ion Etching (DRIE) Systems

Samco delivers Silicon Deep Reactive Ion Etching (DRIE) systems for MEMS device fabrication and TSV via-hole etching. Samco was the first Japanese semiconductor process equipment manufacturer to provide DRIE systems using the Bosch Process. Our systems have industry-leading process capabilities, and the product lineup covers both R&D and production. For high-volume device manufacturing, a double reaction chamber specification is also available.

Key Features and Benefits

    • Industry leading etch rates of over 50 μm/min
    • High selectivity of over 250:1 (Si:Photoresist)
    • Uniformity of ±5% or better (ø4, 6, and 8" wafers)
    • High aspect ratio (greater than 100:1)
    • Low scalloping, smooth sidewall profile (less than 0.1 μm scallops)
    • Patented, dual frequency silion on insulator (SOI) anti-notch etching technique
    • Unique "anti-tilt" feature that ensures high uniformity
    • Electrostatic chuck and helium backside cooling (for wafer temperature control)
    • ICP source can be modified for DRIE of SiO2