Si Deep Reactive Ion Etching Systems

Samco delivers Silicon Deep Reactive Ion Etching (DRIE) systems for MEMS device fabrication and TSV via-hole etching. Samco was the first Japanese semiconductor process equipment manufacturer to provide DRIE systems using the Bosch Process. Our systems have industry-leading process capabilities, and the product lineup covers both R&D and production. For high-volume device manufacturing, a double reaction chamber specification is also available.

Key Features and Benefits

      Benefits of Samco Si DRIE systems:

  • Industry leading etch rates of over 50 μm/min
  • High selectivity of over 250:1 (Si:Photoresist)
  • Uniformity of ±5% or better (4, 6, and 8" wafers)
  • High aspect ratio (greater than 40:1)
  • Low scalloping, smooth sidewall profile (less than 0.1 μm scallops)
  • Patented, dual frequency SOI anti-notch etching technology
  • Unique "anti-tilt" feature that ensures high uniformity
  • Electrostatic chuck and helium backside cooling (for wafer temperature control)
  • ICP source can be modified for DRIE of SiO2