• Atomic Layer Deposition (ALD) Systems

    Atomic layer deposition (ALD) is a thin-film growth technology that is capable of depositing pinhole-free and uniform insulator films for electronic devices (Power and RF). ALD offers exceptional conformality on the high-aspect-ratio trench and via structures, thickness control at the angstrom level, and tunable film composition based on sequential, self-limiting reactions. Samco provides a highly flexible open-loaded thermal ALD system AL-1 and loadlock plasma-enhanced ALD system AD-230LP.

  • Plasma Enhanced CVD Systems

    Plasma Enhanced Chemical Vapor Deposition (PECVD) is a technology to form a thin film by generating active radicals and ions on a target substrate by turning a reactive gas into a plasma state and causing a chemical reaction on the target substrate to be deposited. It is used to deposit silicon nitride film (SiN) as a passivation film and silicon oxide film (SiO₂) as an interlayer insulating film in the manufacturing process of compound semiconductors and silicon semiconductors.

  • Liquid Source CVD Systems

    The Liquid Source CVD Systems is a low-temperature (80 ~ 400°C), high-rate (>300 nm/min) plasma enhanced CVD system for R&D. Samco's unique LSCVD system uses self-bias deposition techniques and a TEOS to deposit SiO2 films with low stress, from thin films to extremely thick films (up to 100 µm).

  • Diamond-Like Carbon (DLC) Coating Systems

    Diamond-like carbon (DLC) coating is a process of depositing a DLC film on a substrate by plasma enhanced chemical vapor deposition (CVD). Samco's DLC coating process allows the formation of dense films using high ion energy. This film has a high barrier performance.


Since our establishment in 1979, Samco has developed a wealth of dry etching expertise. Today our product line includes, open-load, loadlock, and cassette type systems for both R&D and production customers.

  • Atomic Layer Etching (ALE) Systems

    Atomic Layer Etching (ALE) is a technology that separates the adsorption and reaction steps in the etching process and repeats each step to control etching depth at the nano-level. ALE is gaining increasing attention as semiconductor devices become finer, emerging as a key process in the development of next-generation devices. ALE is expected to find applications in processes such as controlling GaN or AlGaN film thickness and maintaining surface smoothness through low-rate etching, as well as in p-GaN/AlGaN high selectivity ratio etching of GaN HEMT device. Samco offers two models of ICP etching systems for ALE, "RIE-400iP-ALE" and "RIE-800iP-ALE," which are suitable for use across research and production stages.

  • Inductively Coupled Plasma (ICP) Etching Systems

    Samco delivers many dedicated Inductively Coupled Plasma (ICP) etching system in research and production to meet each customer's process requirements for high-density plasma etching. Our reliable, durable and compact ICP etching system allows you to handle a variety of materials (III-V compound semiconductors (GaN, GaAs, InP), silicon, SiC, quartz, glass, dielectrics, and metals.).

  • Si Deep Reactive Ion Etching (DRIE) Systems

    Samco delivers Silicon Deep Reactive Ion Etching (DRIE) systems for MEMS device fabrication and TSV via-hole etching. Samco was the first Japanese semiconductor process equipment manufacturer to provide DRIE systems using the Bosch Process. Our systems have industry-leading process capabilities, and the product lineup covers both R&D and production. For high-volume device manufacturing, a double reaction chamber specification is also available.

  • Reactive Ion Etching (RIE) - Plasma Etching Systems

    Samco offers reliable and durable Reactive Ion Etching (RIE) Systems for R&D and production customers. Benchtop compact RIE etcher is a suitable tool for academic device research and die deprocessing for IC failure analysis. Open-load RIE systems and loadlock RIE systems have wide process window for plasma etching of various materials (silicon, dielectric, compound semiconductor, metal, polymer and photoresist). Cassette loading RIE systems improve process throughput for device fabrication.

  • Xenon Difluoride Etching Systems

    Samco's Xenon difluoride (XeF2) Etching Systems is mainly using for the etching of the Si sacrificial layer for fabrication of MEMS (Micro Electro Mechanical Systems) devices. This dry process avoids the destruction of devices due to stiction, which is a problem in the wet process, and eliminates the need for pretreatment and post-processing in the wet process. It is also a tabletop type and very compact in design.

Surface Treatment

Dry cleaning technology that uses gases to remove organic contaminants on wafer surfaces is expected to solve problems associated with wet chemical cleaning. Samco offers plasma cleaners and UV ozone cleaners for surface treatment of plastic packages and lead-frames.

  • Aqua Plasma® Cleaners

    Aqua Plasma® Cleaner is a plasma processing equipment that mainly uses water vapor (H₂O). These systems can perform safe and environmentally friendly surface treatments such as oxide reduction, organic contaminants cleaning, resin bonding, and superhydrophilization.

  • Plasma Cleaning Systems

    Samco's Plasma Cleaners are a parallel-plate system to clean organic and inorganic contamination from the surface of samples. The process chamber allows the user to install multiple electrode shelves, and the flexibility of the shelf electrode configuration supports batch processing of a wide range of products, from research to high volume production.

  • UV Ozone Cleaning Systems

    Samco's UV Ozone Cleaners use a unique combination of ultraviolet irradiation, ozone, and stage heating to gently, yet effectively, remove organic materials from a variety of substrates, including silicon, glass, compound semiconductors (GaN, SiC, GaAs, and InP), sapphire, ceramics, etc. Today our product line includes, compact benchtop and cassette type systems for both R&D and mass production customers.