ICP-RIE Plasma Etching System RIE-400iP
for GaN, GaAs, InP, & SiC


RIE-400iP is a load lock type etching system for Max. ø4" wafers for high precision and high uniform processing of various semiconductor and insulating films. Inductively coupled plasma (Inductively Coupled Plasma), which uses a unique tornado coil, is used as the discharge form to produce a uniform, high-density plasma. In addition, you can select the appropriate plasma source according to the processing material and the processing content.

Key Features and Benefits

New ICP Source "HSTC™: Hyper Symmetrical Tornado Coil

High RF power (2 kW or more) can be applied efficiently and stably, and good uniformity is achieved.

High Flow Exhaust

The exhaust system directly connected to the reaction chamber enables a wide range of process windows from small flow and low pressure ranges to large flow and high pressure ranges.

Endpoint monitoring

It is compatible with both interferometric and emission spectroscopic endpoint monitors, enabling endpoint detection at the target film thickness.

Easy-to-maintain design

The TMP (turbomolecular pump) and high-frequency power supply are integrated into the unit for easy replacement.


High-precision etching of compound semiconductors such as GaN, GaAs, InP, etc.

Production of semiconductor lasers and photonic crystals.


Interferometric endpoint monitor

High-precision endpoint detection is possible, and the etching depth can be controlled to the desired depth.