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Fabrication of a high-Q factor ring resonator using LSCVD deposited Si3N4 film
1. Department of Molecular and Material Sciences, Kyushu University
2. School of Information Engineering, Wuhan University of Technology
3. Institute for Materials Chemistry and Engineering, Kyushu UniversityVol. 7, No. 7 | 1 Jul 2017 | OPTICAL MATERIALS EXPRESS 2182
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Design and fabrication of high-performance diamond triple-gate field-effect transistors
Scientific Reports 6, Article number: 34757 (2016) doi:10.1038/srep34757
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Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors
Sensors 2016, 16(10), 1612; doi:10.3390/s16101612
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UV/ozone Surface Modification for Long-term Stable Hydrophilic Surface of Polymer Microfluidic Devices
MRS Advances, 1, pp 743-748. doi:10.1557/adv.2016.167.
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A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process
Semicond. Sci. Technol. (2015) 30 075003
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A CMOS-Compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs
CS MANTECH Conference, May 18th - 21st, 2015, Scottsdale, Arizona, USA pp. 239-242.
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Optimizing the SiC Plasma Etching Process For Manufacturing Power Devices
CS MANTECH Conference, May 18th - 21st, 2015, Scottsdale, Arizona, USA
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Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale Lithography
Micromachines 2015, 6(2), 252-265; doi:10.3390/mi6020252
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Fabrication and Characterization of a Novel Nanoscale Thermal Anemometry Probe
Journal of Microelectromechanical Systems (2014) 23 , 4
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Recess Etching Process for AlGaN/GaN-HFET Devices Using In-Situ Monitoring
CS MANTECH Conference, May 19th – 22nd, 2014, Denver, Colorado, USA