Atomic layer deposition (ALD) is a thin-film growth technology that is capable of depositing pinhole-free and uniform insulator films for electronic devices (Power and RF). ALD offers exceptional conformality on the high-aspect-ratio trench and via structures, thickness control at the angstrom level, and tunable film composition based on sequential, self-limiting reactions. Samco provides a highly flexible open-loaded thermal ALD system AL-1 and loadlock plasma-enhanced ALD system AD-230LP.
Plasma Enhanced Chemical Vapor Deposition (PECVD) is a technology to form a thin film by generating active radicals and ions on a target substrate by turning a reactive gas into a plasma state and causing a chemical reaction on the target substrate to be deposited. It is used to deposit silicon nitride film (SiN) as a passivation film and silicon oxide film (SiO₂) as an interlayer insulating film in the manufacturing process of compound semiconductors and silicon semiconductors.
The Liquid Source CVD Systems is a low-temperature (80 ~ 400°C), high-rate (>300 nm/min) plasma enhanced CVD system for R&D. Samco's unique LSCVD system uses self-bias deposition techniques and a TEOS to deposit SiO2 films with low stress, from thin films to extremely thick films (up to 100 µm).
Diamond-like carbon (DLC) coating is a process of depositing a DLC film on a substrate by plasma enhanced chemical vapor deposition (CVD). Samco's DLC coating process allows the formation of dense films using high ion energy. This film has a high barrier performance.