Plasma Enhanced CVD Systems

Plasma Enhanced Chemical Vapor Deposition (PECVD) is a technology to form a thin film by generating active radicals and ions on a target substrate by turning a reactive gas into a plasma state and causing a chemical reaction on the target substrate to be deposited. It is used to deposit silicon nitride film (SiN) as a passivation film and silicon oxide film (SiO₂) as an interlayer insulating film in the manufacturing process of compound semiconductors and silicon semiconductors.

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