III-V compound semiconductors—including Indium Phosphide (InP), Gallium Nitride (GaN), and Gallium Arsenide (GaAs)—are foundational materials for high-speed optical communications, power electronics, and high-frequency RF devices. Fabricating these advanced components requires precise plasma etching with high anisotropy, selective pattern transfer, and low surface damage. Samco’s Inductively Coupled Plasma (ICP) etching systems provide optimized process solutions tailored to the distinct material properties of III-V substrates. From sub-micron optical gratings to high-aspect-ratio deep trench structures, our technology ensures exceptional profile control, clean sidewalls, and high process repeatability across both Lab and Fab environments.