DFB/DBR Lasers
Sub-Micron InP Grating Etching for Next-Generation DFB/DBR Lasers
Distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers rely on sub-micron grating structures to achieve precise single-mode wavelength stability. In Indium Phosphide (InP) based photonic devices, fabricating high-aspect-ratio, nanometer-scale gratings with controlled duty cycles is critical to minimizing optical loss and ensuring high side-mode suppression ratios (SMSR).Samco's advanced Indium Phosphide (InP) dry etching technology provides high-precision pattern transfer for sub-micron laser gratings. Using a SiO2 hard mask, this process achieves highly anisotropic profiles with a 100 nm mask width and a 75 nm etch depth at a controlled etch rate of 50 nm/min.While the primary result featured here utilizes a chlorine-based gas chemistry for crisp sidewall definition, Samco also offers an extensive portfolio of methane-hydrogen (CH4/H2) based process data. This versatility allows customers to select the optimal gas chemistry based on their specific mask materials, device architectures, and profile requirements--supporting seamless transition from R&D to high-volume manufacturing across both Lab and Fab environments.
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