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[ 2026.July ]

Introduction to the New Plasma CVD System "PD- 2201HLC"

[ 2026.April ]

Introduction to the Dual-Chamber ALD System "AD-8002LPC"

[ 2026.January ]

Stable Device Isolation Processing for 6-Inch GaN-Based Power Devices

[ 2025.October ]

Atomic-Level Etch Control: Introduction to Atomic Layer Etching (ALE) Systems

[ 2025.July ]

Simultaneous Double-sided Wafer Deposition via Plasma Enhanced ALD

[ 2025.April ]

Introduction of the Single-Wafer Aqua Plasma System

[ 2024.October ]

ICP Etching Process for Realizing SiC Trench MOSFETs

[ 2024.July ]

Surface Treatment of Gold Using Aqua Plasma

[ 2024.April ]

Introduction to the Long-Term Process Stability of Samco Plasma CVD "PD-220 Series" Systems

[ 2024.January ]

Innovation with the New Plasma Source HSTC-M™: Introduction of ICP Etching System for SiC/GaN Power Devices up to 8 Inches

[ 2023.October ]

Introduction of the Three-Chamber CVD System "PD-2203LC"

[ 2023.April ]

Introduction of Aqua Plasma Boost® and AQ-2000BT: Excellent for Reducing Large Sized Samples of Oxidized Copper

[ 2023.January ]

Cryo-ICP Etching System "RIE-800iPLN" for -150°C Process

[ 2022.April ]

Diamond Etching for GaN-based Power Devices

[ 2021.October ]

HfO2 and ZrO2 Film Deposition by ALD