Vertical Power Device
Vertical Gallium Nitride (GaN) power semiconductors--such as trench MOSFETs, Schottky barrier diodes (SBDs), and PN junction diodes--offer high breakdown voltages and low on-resistance for automotive and industrial power systems. Fabricating vertical GaN devices requires precise deep trench etching with high anisotropy, vertical sidewall control, and low surface degradation to preserve electrical breakdown capability.
Samco's Inductively Coupled Plasma (ICP) etching systems deliver high-aspect-ratio GaN trench etching optimized for vertical power devices. The process achieves steep sidewalls, uniform depth control, and smooth trench bottoms while suppressing plasma-induced surface damage. This provides a repeatable, defect-free etching baseline for high-voltage power components across both Lab and Fab environments.
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