Atomic Layer Etching (ALE) is a technology that separates the adsorption and reaction steps in the etching process and repeats each step to control etching depth at the nano-level. ALE is gaining increasing attention as semiconductor devices become finer, emerging as a key process in the development of next-generation devices. ALE is expected to find applications in processes such as controlling GaN or AlGaN film thickness and maintaining surface smoothness through low-rate etching, as well as in p-GaN/AlGaN high selectivity etching of GaN HEMT device.

ALE-GaN etching

ALE-Si etching

ALE-SiO2 etching