Ultrafine etching of XMOS device by RIE plasma etching system

This is the result of Poly-Si gate etching of an XMOS (double-gate MOS) device using a loadlock RIE plasma etching system. Vertical anisotropic etching of Poly-Si is achieved using a 16 to 20 nm wide mask.

Photo courtesy of National Institute of Advanced Industrial Science and Technology

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