Si DRIE System RIE-800iPB
Bosch Process and Non Bosch Process

Description

The RIE-800iPB Si DRIE System supports the Bosch process to deliver high-rate, high-aspect-ratio silicon etching required for MEMS and TSV applications. It also accommodates non-Bosch processes for flexible sidewall profile control. Equipped with a load lock chamber, the system provides single-wafer processing for substrates up to ø8 inches with high process repeatability.

Key Features and Benefits

  • Dedicated Bosch process ICP coil enables efficient application of up to 5,000 W RF power
  • High-speed gas switching (0.1 s) achieves low-scallop sidewall processing
  • High silicon-to-photoresist selectivity of over 500:1
  • High silicon etch rates exceeding 45 μm/min
  • Capable of high-aspect-ratio etching exceeding 100:1
  • Suppresses tilt to ensure high process uniformity across ø8-inch wafers
  • Supports parameter ramping for optimized process control
  • Enables non-Bosch processing for scallop-free etching and tapered sidewall control
  • Extensive process library available

Applications

  • MEMS device fabrication (accelerometers, gyroscopes, pressure sensors, actuators, etc.)
  • Deep silicon etching for TSVs and 3D integration
  • Microfluidic device fabrication (microchannels, μTAS, etc.)
  • Quartz (SiO2) microfabrication for optical components and fluidic substrates
  • R&D applications in photonics and advanced microstructures

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