Samco
Si DRIE Systems
Samco’s Silicon Deep Reactive Ion Etching (Si DRIE) systems utilize high-density plasma technologies to achieve fast, high-aspect-ratio micro-fabrication in silicon substrates. Equipped with high-precision gas switching networks, 5 kW high-power RF sources, and temperature-controlled electrostatic chucks (ESC), our equipment enables fast, alternating etch-passivation cycling using the Bosch Process. Built to deliver exceptional process stability, Samco Si DRIE platforms provide repeatable silicon processing for MEMS, TSV, and advanced packaging applications.
Features of Si DRIE Systems
Samco Si DRIE systems utilize the licensed Bosch Process, a three-step time-multiplexed sequence executing isotropic silicon etching, protective polymer deposition, and anisotropic bottom-passivation removal. By rapidly cycling between SF6 for silicon etching and C4F8 for sidewall passivation, the systems achieve fast, highly vertical silicon deep trenching with high mask selectivity. Driven by high-density ICP sources and dynamic thermal management, Samco Si DRIE platforms deliver precise, highly repeatable process performance for commercial manufacturing lines. These capabilities support critical micro-fabrication steps across diverse fields, including MEMS sensors (accelerometers and gyroscopes), Through-Silicon Vias (TSV) for 3D packaging, inkjet printheads, Si power devices, and microfluidic (uTAS) medical devices.
Si DRIE Systems FAQ
- What are the key process advantages of Samco's licensed Bosch Process technology?
- Having formally acquired the Bosch Process license from Robert Bosch GmbH in 2003, Samco integrates a refined three-step alternating sequence: isotropic silicon etching using SF6, protective polymer deposition using C4F8, and directional bottom-passivation removal. This licensed time-multiplexed scheme delivers rapid silicon etch rates, high aspect ratios, and superior mask selectivity while maintaining precise sidewall profile control.
- How does the 5 kW high-power RF source configuration improve Si DRIE process performance?
- The 5 kW high-power RF ICP source generates an ultra-high-density plasma field that drives high dissociation rates of SF6 etchant gas. Combined with fast-response gas switching networks, this high-density plasma enables rapid silicon removal rates without sacrificing sidewall verticality or feature profile fidelity during deep trenching.
- What measures are taken to minimize sidewall scalloping and maintain feature uniformity?
- Samco Si DRIE tools utilize high-speed gas switching manifolds and dynamic electrostatic chuck (ESC) thermal management to control the etch-to-passivation cycle frequency. Rapid gas displacement reduces individual scallop depth along feature sidewalls, while precise helium backside cooling prevents photoresist degradation and micro-trenching over extended etch times.
- Which device applications and materials are supported by Samco Si DRIE platforms?
- Samco Si DRIE systems are widely deployed for MEMS sensors (accelerometers, gyroscopes), Through-Silicon Vias (TSV) for 3D packaging, advanced packaging interconnects, inkjet printheads, Si power devices, and microfluidic (uTAS) components. The equipment accommodates diverse mask types, including photoresist, SiO2, and metallic hard masks.
- How do Samco Si DRIE tools support process scaling from open load R&D tools to production systems?
- Samco maintains identical ICP chamber geometries, RF matching network designs, and fast gas distribution topologies across both flexible open load platforms and automated load lock or cassette loading production systems. This hardware continuity allows Bosch Process recipes, etch rates, and aspect ratio limits established in development to transfer directly to volume manufacturing environments with minimal recipe adjustments.
