Si DRIE System RIE-800BCT
Production-Grade Silicon DRIE for Advanced Packaging & MEMS
Description
The RIE-800BCT is a Silicon Deep Reactive Ion Etching (DRIE) system engineered to deliver high etch rates and high aspect ratios for volume manufacturing in MEMS, TSV, and 3D IC packaging.
Equipped with an advanced atmospheric transfer module and a vacuum load lock, the system processes single wafers up to ø8 inches with superior process repeatability and minimal particulate generation.
Key Features and Benefits
- Dedicated Bosch process ICP coil enables efficient application of up to 5,000 W RF power
- High-speed gas switching (0.1 s) achieves low-scallop sidewall processing
- High silicon-to-photoresist selectivity of over 500:1
- High silicon etch rates exceeding 45 μm/min
- Capable of high-aspect-ratio etching exceeding 100:1
- Suppresses tilt to ensure high process uniformity across ø8-inch wafers
- Supports parameter ramping for optimized process control
- Enables non-Bosch processing for scallop-free etching and tapered sidewall control
- Extensive process library available
Applications
- MEMS device fabrication (accelerometers, gyroscopes, pressure sensors, actuators, etc.)
- Deep silicon etching for TSVs and 3D integration
- Microfluidic device fabrication (microchannels, μTAS, etc.)
- Quartz (SiO2) microfabrication for optical components and fluidic substrates
- R&D applications in photonics and advanced microstructures
- MEMS device fabrication (accelerometers, gyroscopes, pressure sensors, actuators, etc.)
- Deep silicon etching for TSVs and 3D integration
- Microfluidic device fabrication (microchannels, μTAS, etc.)
- Quartz (SiO2) microfabrication for optical components and fluidic substrates
- R&D applications in photonics and advanced microstructures
Papers & Publications
- Watanabe, Naoya, et al. "Development of a high-yield via-last through silicon via process using notchless silicon etching and wet cleaning of the first metal layer." Japanese Journal of Applied Physics 56.7S2 (2017): 07KE02.
- Takase, Shun, et al. "Thick film MEMS process using reverse lift-off." Microelectronic Engineering 281 (2023): 112081.
- Tsuchiya, Toshiyuki, et al. "Tensile fracture of integrated single-crystal silicon nanowire using MEMS electrostatic testing device." Procedia Structural Integrity 2 (2016): 1405-1412.




