Si DRIE System RIE-400iPB
Precision Deep Etching for Si and SiO2

Description

The Samco RIE-400iPB is a high-speed silicon deep etching system powered by an Inductively Coupled Plasma (ICP) source. Supporting both Bosch and non-Bosch processes, it delivers high-aspect-ratio silicon etching for MEMS and TSVs alongside precise sidewall profile control. Its load-lock chamber supports single-wafer processing for substrates up to 4 inches in diameter, ensuring excellent process repeatability. Built for a wide range of applications—including MEMS, microfluidics, and optical components—the system can also be configured with a specialized ICP source for high-rate SiO2 etching.

Key Features and Benefits

  • Efficient RF power coupling via Bosch-dedicated ICP coil
  • High-aspect-ratio silicon etching (>30:1)
  • Low-scallop sidewalls via rapid gas switching
  • Scallop-free processing with non-Bosch capability
  • Precise positive-taper sidewall profile control
  • Extensive process library
  • High-rate SiO2 etching via swappable ICP source (Optional)

Applications

  • MEMS device fabrication (accelerometers, gyroscopes, pressure sensors, actuators, etc.)
  • Deep silicon etching for TSVs and 3D integration
  • Microfluidic device fabrication (microchannels, μTAS, etc.)
  • Quartz (SiO2) microfabrication for optical components and fluidic substrates
  • R&D applications in photonics and advanced microstructures

Options

  • SiO₂ ICP Source Unit

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