ALD System AD-800LP
Oxide, nitride, and conductive films deposition
Description
The AD-800LP is a load lock Atomic Layer Deposition (ALD) system capable of controlling the film thickness at the atomic level. It utilizes both thermal ALD and plasma enhanced ALD to deposit a diverse range of materials, including oxide, nitride, and conductive films. The system achieves exceptional control over film thickness, superior in-plane uniformity, and excellent step coverage by alternately introducing organometallic precursors and oxidants into the reaction chamber, ensuring deposition occurs solely through surface reactions. Pulsed precursor delivery, with durations of several hundred milliseconds or less, minimizes precursors loss and enhances deposition efficiency. The carrier tray transfer system enables the processing of single ø8 inch wafers or the simultaneous processing of three ø4 inch wafers.
Key Features and Benefits
- Low-damage plasma-enhanced ALD combined with thermal ALD in a single chamber
- Atomic-level control of film thickness and uniformity
- Highly conformal deposition in high-aspect-ratio structures
- Excellent within-wafer uniformity and process repeatability
Applications
- Gate insulators for electronic devices
- Passivation film for semiconductors, organic EL, etc.
- Reflective surface of semiconductor laser
- Deposition on 3D structures such as MEMS
Options
- Remote plasma unit
- Ozonizer
Papers
- Kirchner, Katelyn A., et al. "Controlling Thermal Conductivity of Amorphous SiO x Films through Structural Engineering Utilizing Single Crystal Substrate Surfaces." Nano Letters (2025).
- Liu, Jiangwei, et al. "Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates." Nanomaterials 13.7 (2023): 1256.
