ALD System AD-10P
Open load ALD system
Description
The AD-10P is an open load Atomic Layer Deposition (ALD) system that enables atomic level control over film thickness. It utilizes both thermal ALD and plasma enhanced ALD to deposit a diverse range of materials, including oxide, nitride, and conductive films. The system achieves exceptional control over film thickness, superior in-plane wafer uniformity, and excellent step coverage by alternately introducing organometallic precursors and reactants into the reaction chamber, ensuring deposition occurs solely through surface reactions. Pulsed precursor delivery, with durations of several hundred milliseconds or less, minimizes precursors loss and enhances deposition efficiency. The system can process a single ⌀8 inch wafer or simultaneously process three ⌀4 inch wafers.
Key Features and Benefits
- Uniform layer control at the atomic layer level
- Conformal deposition to high aspect ratio structures
- Excellent in-plane uniformity and repeatability
- Chamber designs focused on minimizing particle generation
Applications
- Gate insulators for electronic devices
- Passivation film for semiconductors, organic EL, etc.
- Reflective surface of semiconductor laser
- Deposition on 3D structures such as MEMS
- Deposition on graphene
