for Vertical Power Devices

We have experience in providing ICP-RIE equipment and process technology for the fabrication of GaN-based light emitting devices. We also provide equipment for trench and mesa etching for 4H-SiC power devices.

Based on these experience, we have developed GaN trench etching process for vertical power devices. 
This result is a GaN trench etching with a depth of 3 μm. GaN was epitaxially grown on sapphire substrate and Samco RIE-400iP was used as etching system.The trench is vertical and the bottom is round. We are also developing the forward tapered shape, and these shapes are controlled by adjusting the process parameters of RIE-400iP.

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