Etch stop at the AlGaN interface

Samco offers high selectivity etching of GaN/AlGaN for GaN RF device fabrication by ICP plasma etching system.

The p-GaN layer is fully etched to expose the AlGaN layer, and high selectivity processing of GaN/AlGaN is required, and processing with a selectivity ratio of 50 or more is possible. In addition, the AlGaN surface is processed while remaining smooth.

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