ProductsICP Etching System RIE-800iP

The Samco RIE-800iP is a flagship load-lock Inductively Coupled Plasma (ICP) dry etching system engineered for high-precision processing of substrates up to 8-inch (200 mm). Featuring an isolated load-lock chamber, the platform protects the reaction chamber from atmospheric oxygen and moisture ingress, delivering high process stability and wafer-to-wafer repeatability across compound semiconductors, dielectric films, and functional metal stacks.

• HSTC™ High-Power ICP Source: Incorporates Samco's proprietary HSTC™ (Hyper Symmetrical Tornado Coil) ICP source to deliver efficient and stable high-RF power coupling (2 kW or more), generating high-density, highly uniform plasma over the entire Ø8-inch processing area.
• Adjustable Lower Electrode Elevation Mechanism: Features a motorized vertical stage mechanism to optimize the substrate-to-plasma gap distance, securing uniform electric field distribution and superior in-plane etch rate uniformity.
• Direct-Coupled High-Flow Vacuum Exhaust: Utilizes a high-conductance vacuum exhaust system connected directly to the process chamber, establishing a broad operational window that spans from low-flow/low-pressure regimes to high-flow/high-pressure regimes.
• ESC & Helium Backside Thermal Management: Combines an Electrostatic Chuck (ESC) with backside Helium gas cooling to maintain precise, stable substrate temperature control, preventing photoresist degradation and thermal mask erosion during aggressive physical etching.
• Advanced Real-Time Endpoint Detection Options: Supports optional Optical Emission Spectroscopy (OES) or Laser Interferometry endpoint monitoring for real-time etch depth control and automatic process termination at heterojunction interfaces.

• High-Selectivity GaN/AlGaN Etching: Highly selective etch processing across AlGaN/GaN heterostructures with minimal sub-surface lattice damage for RF and power electronics.
• GaN Gate Recess Fabrication: Low-damage, atomic-scale depth control for E-mode (normally-off) GaN HEMT gate recess processes.
• Vertical GaN Power Device Trenching: High-aspect-ratio trench formation with controlled sidewall taper angles for vertical GaN power transistors.
• SiC MOSFET Trench Etching: High-rate, smooth sidewall trench patterning for high-voltage SiC power MOSFETs.
• GaAs VCSEL & InP Photonics Processing: Smooth mesa sidewall fabrication and grating/waveguide formation for VCSELs, DFB lasers, and photonic integrated circuits (PICs).
• Dielectric Patterning (SiO₂ / SiN_x): High-rate, anisotropic dry etching of dielectric hard masks and inter-layer insulating films.
• Ferroelectric & Noble Metal Etching: Residue-free etching of difficult-to-etch materials, including ferroelectrics (PZT, BST, SBT) and metal electrode stacks (Pt, Au, Ru, Al, Cr, Ni).

• Laser/Ramp Interferometric Endpoint Monitor: Provides real-time measurement of etch depth and etch rate using laser interference, enabling precise layer thickness control and process termination for transparent and semi-transparent thin films.
• Optical Emission Spectroscopy (OES) Endpoint Monitor: Monitors specific chemical species' plasma emission intensity in real time to automatically detect material interface transitions and process endpoints during multi-layer stack etching.