SiC (Silicon Carbide) has high withstand voltage and excellent heat resistance that silicon devices do not have, and demand is expanding especially as a next-generation power device material for automobiles, railways, and industrial equipment.

We are expanding sales of ICP etching system, dry cleaning system, ALD (atomic layer deposition) equipment, etc. for SiC power devices from research and development to full-scale mass production, and the semiconductor of the year selected by industry papers. It has been highly evaluated, such as receiving the Excellence Award. Recently, orders for equipment for SiC power devices have been strong from companies and research institutes in South Korea, Taiwan, and North America, including Japan.