Non-Bosch positive taper etching
High-rate deep silicon etching of 50 µm square hole patterns to a depth of 126 µm using a non-Bosch process. The etch profile is precisely controlled to a 73° positive taper with no bowing, achieving an etch rate of 7.9 µm/min. While conventional Bosch processes inherently produce sidewall scallops, this non-Bosch approach eliminates scalloping entirely. Capable of etching beyond 100 µm in depth while maintaining smooth sidewalls, this process is ideal for Through-Silicon Via (TSV) electrode formation.
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