ProductsLSCVD System PD-200STL

The PD-200STL is a high-speed Plasma-Enhanced CVD (PECVD) system designed for depositing silicon oxide (SiO₂) and silicon nitride (SiN) films using liquid sources. By utilizing ion energy generated from the sheath electric field on the cathode side, the system enables low-stress thick film deposition even at low temperatures. Furthermore, the system is equipped with a load lock chamber and prevents exposure of the reaction chamber to the atmosphere, ensuring highly reproducible film deposition.

High Film Thickness Uniformity & Stability: Consistent, repeatable layer quality across wafers.High Deposition Rate & Stress Control: Rapid growth with low internal stress to prevent wafer bowing and cracking.Low-Temperature Deposition ($\ge$80°C): Enables processing on heat-sensitive substrates and polymers.Superior Step Coverage: Highly conformal dielectric lining for complex 3D structures and high-aspect-ratio features.Refractive Index Control (using Ge, P, B): Precise tuning of film optical properties via dopant gas addition.

• SAW Device Temperature Compensation & Passivation: High-density SiO2 film deposition for frequency drift mitigation and electrode protection.

• MEMS Etch Masks & Sacrificial Layers: Rapid, low-stress thick SiO2 deposition to prevent wafer bowing and cracking.

• TSV Sidewall Insulation: Conformal dielectric lining for high-aspect-ratio Through-Silicon Vias in 3D packaging.

• Optical Waveguide Core & Cladding: Precise refractive index control for low-loss photonic structures SiO2, SiN, SiON

• High Film Thickness Uniformity & Stability: Consistent, repeatable layer quality across wafers.

• High Deposition Rate & Stress Control: Rapid growth with low internal stress to prevent wafer bowing and cracking.

• Low-Temperature Deposition ($\ge$80°C): Enables processing on heat-sensitive substrates and polymers.

• Superior Step Coverage: Highly conformal dielectric lining for complex 3D structures and high-aspect-ratio features.

• Refractive Index Control (using Ge, P, B): Precise tuning of film optical properties via dopant gas addition.