ProductsPECVD System PD-2201HLC

The Samco PD-2201HLC is a cassette-loading Plasma-Enhanced Chemical Vapor Deposition (PECVD) system designed for the production lines of compound semiconductors and electronic components. Built upon field-proven R&D equipment architecture, the platform integrates a cassette loading module with a load-lock chamber and process reactor to deliver stable film deposition, process repeatability, and high tool availability. Through structural innovations in chamber heating, electrode geometry, and optional remote plasma cleaning, the PD-2201HLC achieves up to a 70% reduction in overall process takt time compared to conventional systems.

• Up to 70% Takt-Time Reduction: Hardware improvements to the substrate heater and electrode structure eliminate the need for thermal ramp-up and ramp-down cycles during chamber cleaning, significantly shortening total process cycle times.
• Enhanced Uniformity at High Deposition Rates: Optimized plasma state stability maintains precise within wafer film thickness and refractive index uniformity on 8-inch wafers) even during high-rate deposition.
• Dual-Frequency Stress Control: Superimposing a 400 kHz low-frequency power supply onto the primary 13.56 MHz RF source allows precise, linear control of intrinsic film stress (from compressive to tensile) in SiN_x and SiO₂ layers.
• Versatile Substrate & Precursor Handling: Accommodates single-wafer processing up to 8-inch as well as batch loading of smaller wafers via 230 mm carrier trays. Supports standard SiH₄-based gas delivery alongside liquid precursors such as TEOS and SN-2.
• Optional Remote Plasma Cleaning (RPS): Integrates an optional NF₃-based remote plasma cleaning unit to shorten chamber maintenance duration and maintain highly reproducible internal reactor conditions.

• InP / GaAs Photonic Devices & Laser Facet Passivation: Delivers precise optical-index SiO₂ and SiN_x multi-layer films for InP-based DFB/EML laser cleavage facets and GaAs VCSELs to eliminate surface recombination, prevent Catastrophic Optical Damage (COD), and provide inter-electrode dielectric insulation.
• SAW & BAW RF Acoustic Wave Filters: Deposits high-density, stress-controlled SiO₂ layers for Temperature Coefficient of Frequency (TCF) compensation and SiN_x surface passivation coatings on SAW and BAW (FBAR) filter devices used in mobile RF front-end modules.
• MEMS Devices & Electronic Components: Grows stress-balanced SiN_x, SiO₂, and amorphous silicon (a-Si) films for structural diaphragms, electrical insulation, and environmental protection layers in MEMS pressure sensors, gyroscopes, and passive electronic components.
• GaN & GaAs Power / RF Semiconductor Passivation: Deposits low-hydrogen SiN_x dielectric layers on GaN HEMT active channels and GaAs MMIC interconnects to suppress surface state trap density, mitigate current collapse, and provide reliable inter-layer dielectric (ILD) insulation.
• GaN / GaAs Micro-LED Array Sidewall Passivation: Coats etched mesa sidewalls of sub-10 μm Micro-LED arrays with uniform, pinhole-free dielectric passivation to suppress non-radiative surface recombination and enhance internal quantum efficiency (IQE).

• Dual-Frequency & VHF Process Compatibility: Supports dual-frequency RF plasma configurations (13.56 MHz + 400 kHz) for precise film stress tuning, as well as Very High Frequency (VHF: 27 MHz) options for high-rate, low-damage deposition regimes.
• Liquid Precursor Chemistry Delivery: Compatible with liquid precursor delivery systems, enabling TEOS-based SiO₂ deposition and organic liquid precursor SN-2 for SiN_x film growth.
• Multi-Wafer Carrier Tray Batch Loading: Enables simultaneous batch processing of small-diameter substrates using specialized carrier trays (9 × Ø2", 5 × Ø3", or 3 × Ø4" wafers per run) to maximize production throughput.
• Atmospheric Cassette Module Compatibility: Configurable with an atmospheric cassette loading chamber to streamline substrate queuing and facilitate automated fab integration.