To improve manufacturing yield

The ICP (Inductively Coupled Plasma) etching system was used to create a narrow scribe line with no chipping, and a pointed V-shaped scribe bottom was used to create a GaAs plasma scribe that is easy to break. It is capable of processing a width of 11 μm and a depth of 50 μm, and the etching speed is about 10 μm/min.

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