ProductsALE System RIE-400iP-ALE

The RIE-400iP-ALE is an Inductively Coupled Plasma (ICP) Atomic Layer Etching system engineered specifically for sub-nanometer depth control and minimal sub-surface damage. By decoupling plasma generation from ion acceleration and introducing self-limiting reaction cycles, the system overcomes the structural degradation limitations common in conventional Reactive Ion Etching (RIE).

• Cyclic Self-Limiting Process Control: Sequential gas injection and purge cycles decouple surface modification from layer removal, achieving predictable, digitized etch rates (Å/cycle).
• Low-Damage ICP Plasma Source: A proprietary Tornado ICP coil design generates high-density plasma under low chamber pressure, enabling low-bias operation that keeps ion energy below the substrate displacement threshold.
• Fast Gas Switching & Chamber Evacuation: High-speed valve manifolds combined with optimized chamber fluid dynamics allow rapid precursor purging, preventing gas-phase cross-contamination and shortening cycle times.
• Flexible Substrate Handling: Accommodates single wafers up to 200 mm (8-inch) as well as small piece samples, supporting seamless transition from academic R&D to pilot-line development.
• Seamless Process Switching: Executes both conventional anisotropic ICP-RIE processes and specialized directional ALE cycles within a single system platform.

GaN HEMT Devices: Recessed gate fabrication with precise depth uniformity, eliminating gate leakage caused by plasma-induced lattice damage.
SiC Power Devices: Trench bottom conditioning and shallow recess etching requiring smooth, defect-free surfaces.
Ultra-Thin Film & 2D Materials: Selective removal of silicon nitride spacers, transition metal dichalcogenides (TMDs), and atomic-scale oxide patterns.