Si DRIE System RIE-800iPB
Bosch Process
Description
The RIE-800iPB Si DRIE System supports the Bosch process to deliver high-rate, high-aspect-ratio silicon etching required for MEMS and TSV applications. It also accommodates non-Bosch processes for flexible sidewall profile control. Equipped with a load lock chamber, the system provides single-wafer processing for substrates up to ø8 inches with high process repeatability.
Key Features and Benefits
- Dedicated Bosch process ICP coil enables efficient application of up to 5,000 W RF power
- High-speed gas switching (0.1 s) achieves low-scallop sidewall processing
- High silicon-to-photoresist selectivity of over 500:1
- High silicon etch rates exceeding 45 μm/min
- Capable of high-aspect-ratio etching exceeding 100:1
- Suppresses tilt to ensure high process uniformity across ø8-inch wafers
- Supports parameter ramping for optimized process control
- Enables non-Bosch processing for scallop-free etching and tapered sidewall control
- Extensive process library available
Applications
-
MEMS Device Microfabrication (acceleration sensors, gyro sensors, pressure sensors, actuators, etc.)
-
Inkjet Printhead Nozzle Processing
-
Through-Silicon Via (TSV) Formation
-
Precision Processing for Electronic Components
