ProductsPECVD System PD-220NL

The PD-220NL is a load lock plasma-enhanced chemical vapor deposition (PECVD) system designed for silicon-based thin film deposition for research and development. It deposits SiO2 and SiNx films with uniform thickness and controlled stress. The system supports both stable 13.56 MHz processing and dual-frequency 13.56 MHz/400 kHz processing for film stress control. It also accommodates liquid precursor processes, such as TEOS and SN-2, as well as SiH4-based processes. The system processes multiple small wafers using a ø230 mm carrier tray and can handle different wafer sizes by changing the tray.

• Processing up to ø220 mm (ø3" x 5, ø4" x 3, ø8" x 1)
• Superior uniformity and stress control
• Excellent process stability and repeatability
• Robust system with minimal running / maintenance cost
• User-friendly touch screen interface for parameter control and recipe storage.
• With its sleek, compact design, the PD-220NL requires minimal cleanroom space
• Dual-frequency (13.56 MHz + 400 kHz) PECVD for superior process control

• SiH4-based SiO2
• SiH4-based SiNx
• TEOS-based SiO2
• SN-2 liquid precursor-based SiNx

• Dual-frequency RF (13.56 MHz + 400 kHz) for precise film stress control
• VHF power capabilities (27.12 MHz) for high-quality film deposition
• SiO2 deposition using liquid TEOS precursor
• SiNx deposition using liquid SN-2 precursor