Samco
PECVD Systems
Samco’s plasma enhanced chemical vapor deposition (PECVD) systems utilize radio frequency (RF) generated plasma to form high-density dielectric and passivation films at reduced substrate temperatures. Designed to optimize film stoichiometry and physical stress, our PECVD equipment enables uniform deposition of silicon oxide (SiO2), silicon nitride (SiN), and silicon oxynitride (SiON). Built to bridge the gap between Lab and Fab, Samco PECVD platforms deliver stable, repeatable film growth across compound semiconductors, silicon devices, and advanced electronic devices.
Features of PECVD Systems
Samco PECVD systems integrate advanced power delivery options, including dual-frequency (13.56 MHz + 400 kHz) plasma excitation to independently control film stress, density, and interface properties without thermal degradation. For applications requiring reduced ion bombardment and enhanced plasma density, high-frequency 27.12 MHz configurations provide gentle, high-quality film growth suitable for delicate device architectures. Additionally, our proprietary liquid source precursor, SN-2, enables safe, silane-free silicon nitride (SiN) deposition without toxic gas handling constraints. Supported by customizable gas manifolds and TEOS liquid delivery, the lineup spans open load R&D platforms to load lock and cassette loading systems optimized for high-throughput production lines.
PECVD Systems FAQ
- What film types and precursor options are available on Samco PECVD systems?
- Samco PECVD systems support standard gas chemistries (SiH4, N2O, NH3, N2) to deposit high-purity SiO2, SiN, and SiON films. For enhanced safety and process flexibility, our systems also accommodate TEOS liquid sources for low-stress thick SiO2 deposition, as well as our proprietary SN-2 liquid precursor for safe, silane-free SiN deposition.
- How does dual-frequency RF power control film stress and optical properties?
- Samco integrates a dual-frequency RF setup (13.56 MHz + 400 kHz) to independently tune physical film properties. While high-frequency power (13.56 MHz) drives gas dissociation and deposition rate, low-frequency power (400 kHz) controls ion bombardment energy at the substrate surface. This dual-source control allows precise tuning of internal stress (from compressive to tensile) and refractive index without increasing substrate temperature.
- What advantages does the 27.12 MHz High-Frequency plasma option offer?
- The 27.12 MHz high-frequency plasma configuration increases plasma density while lowering self-bias voltage compared to conventional 13.56 MHz sources. This enables high-rate deposition at reduced ion bombardment energies, minimizing electrical and structural damage to sensitive gate interfaces, thin channels, and delicate compound semiconductor surfaces.
- How is our proprietary SN-2 liquid precursor used for safe SiN deposition?
- SN-2 is a proprietary, non-flammable liquid precursor engineered to replace toxic and pyrophoric silane (SiH4) gas in silicon nitride (SiN) deposition processes. Utilizing SN-2 eliminates the need for expensive gas cabinet infrastructure and hazardous gas monitoring systems while providing dense, low-pinhole SiN passivation films with high breakdown voltage.
- How do Samco PECVD platforms support process transfers from R&D to automated production?
- Samco standardizes core plasma electrode geometries, RF matching networks, and showerhead gas distribution setups across both open-load R&D tools and automated load-lock or cassette-to-cassette tools. This hardware consistency ensures that deposition rates, film stress parameters, and stoichiometry established in the laboratory transfer directly to commercial manufacturing lines.
