Samco
ALD Systems
Samco’s atomic layer deposition (ALD) systems deliver highly uniform, pinhole-free dielectric and functional thin films for compound semiconductors, silicon substrates, and advanced electronic devices. Driven by sequential, self-limiting surface reactions, our thermal and plasma-enhanced ALD technologies provide precise atomic-scale thickness control and exceptional step coverage over extreme aspect ratio structures. Built to bridge the gap between Lab and Fab, Samco ALD platforms enable reproducible process scaling from fundamental university research to automated volume production.
Features of ALD Systems
Samco ALD systems provide precise digital film thickness control with angstrom-level accuracy, making them ideal for high-k gate dielectrics, surface passivation, and conformal encapsulation layers. The product lineup enables deposition of high-purity aluminum oxide (Al2O3), hafnium oxide (HfO2), silicon dioxide (SiO2), and titanium dioxide (TiO2) with tightly controlled film stoichiometry, low fixed charge, and high breakdown fields. These film capabilities directly support compound semiconductor technologies including GaN power/RF devices and InP optoelectronics, alongside silicon ICs, MEMS, and 3D trench architectures. To support diverse manufacturing and laboratory requirements, the system lineup includes flexible open-load configurations for agile process exploration as well as load-lock and cassette-to-cassette modules designed for contamination-free commercial production.
ALD Systems FAQ
- What precursors and film chemistries are available on Samco ALD systems?
- Samco ALD systems process a broad range of precursors to deposit high-purity oxides and nitrides, including Al2O3, HfO2, SiO2, TiO2, and etc. Our thermal and plasma-enhanced ALD (PEALD) configurations feature precise temperature control across precursor delivery lines and bubblers, ensuring stable vaporization for liquid, solid, and low-vapor-pressure metal-organic sources.
- How does Samco ensure film uniformity and conformality on high-aspect-ratio 3D structures?
- By utilizing sequential, self-limiting surface reactions with optimized purge cycles, Samco ALD tools achieve excellent thickness uniformity across 200 mm wafers. The gas distribution and chamber purge dynamics allow precursor molecules to saturate deep trench and via architectures, delivering conformal step coverage on high-aspect-ratio Power and RF device geometries.
- What is the difference between Samco thermal ALD and Plasma-Enhanced ALD (PEALD)?
- Thermal ALD relies on thermal energy to drive self-limiting surface reactions, making it suitable for thermally stable substrates and high-aspect-ratio deep trenches. PEALD introduces active radicals generated by an RF plasma source, enabling high-density film deposition at significantly lower substrate temperatures. PEALD is widely used for temperature-sensitive compound semiconductor devices, flexible substrates, and specialized interface passivation layers.
- How are Samco ALD tools configured to transition processes from R&D to volume production?
- Samco offers modular system platforms sharing identical reaction chamber dynamics and precursor delivery architectures across open-load R&D tools and automated load-lock or multi-chamber production systems. This design consistency allows process recipes developed in the laboratory to be transferred directly to commercial manufacturing environments without redesigning process windows.
- Can Samco ALD systems process delicate compound semiconductor substrates such as GaN, InP, or GaAs without plasma damage?
- Yes. For plasma-sensitive compound semiconductor surfaces, our PEALD platforms utilize remote plasma source geometries to minimize direct ion bombardment while delivering reactive radicals to the substrate. Additionally, thermal ALD options provide completely radical- and ion-free reaction environments, protecting delicate interfaces in GaN HEMTs, InP lasers, and GaAs-based photonic devices.
