This is the forward taper results with high aspect ratio on a ø8 inch wafer with a depth of 400 μm and a hole diameter of 15 μm. In this kind of deep reactive ion etching at the hundred-micron level, many problems occur, such as side etching due to the bowing profile, and the etching of the sidewall passivation film. We have resolved these problems and created excellent high aspect etching profiles.
- Forward taper
- Selectivity: 40
- Aspect ratio: 27
- Depth: 400 μm
- Tilt: 90° ± 0.3°@ø8"
- No bowing